4 November 2010 Microwave signal generation with the frequency-selective sideband injection-locking of semiconductor lasers
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Abstract
Two longitudinally multimode Febry-Perot diode lasers have been sideband injection-locked to the +1 and -1 sidebands of a 3.4GHz electro-optical modulator (EOM). Optical heterodyne measurement showed that powers of 99.5% of the slave laser could be injection-locked to the +1 or -1 sidebands, and the unselected master laser carrier was suppressed down to -24dB. Generally, the long-term stability and efficiency of the injection-locking to the +1 sideband was worse than the -1 due to the asymmetry of the injection-locking bandwidth. The microwave signal at 6.8GHz had a measured 3dB linewidth of less than 200Hz, without considering the noise contribution by the driving signal of the additional acousto-optical modulator. The proposed method will be used for driving the stimulated Raman transitions in a Rubidium based atom gyroscope.
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Hongbo Xue, Hongbo Xue, Yanying Feng, Yanying Feng, Zhaoying Zhou, Zhaoying Zhou, Xiongying Ye, Xiongying Ye, Xiaojia Wang, Xiaojia Wang, Xu Chen, Xu Chen, "Microwave signal generation with the frequency-selective sideband injection-locking of semiconductor lasers", Proc. SPIE 7846, Quantum and Nonlinear Optics, 78460A (4 November 2010); doi: 10.1117/12.869891; https://doi.org/10.1117/12.869891
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