5 November 2010 An analytic expression of spontaneous emission FWHM in GaAs planar micro-cavity
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Proceedings Volume 7846, Quantum and Nonlinear Optics; 78460N (2010); doi: 10.1117/12.868389
Event: Photonics Asia 2010, 2010, Beijing, China
The full-width half maximum (FWHM) is one of important parameters that can exhibit the micro-cavity effect. An approximate analytic expression of spontaneous emission for GaAs micro-cavity in our previous work can be instead of the numerical integral, but it is so complex that it cannot give the analytic expression of FWHM. This paper will set up another approximation to give a new analytic expression of spontaneous emission, which can give the same results with the numerical integral in the vertical direction, in which Fermi-Dirac distribution functions of electrons in the conduction band and the valence band are considered. Although the new approximate analytic expression is simpler than that in our previous work, it can be used to study the spontaneous emission spectra FWHM with a small angle in the vertical direction of planar micro-cavity. The two approximate expressions of FWHM for enhancement spontaneous emission spectrum into the small angle are obtained by the new analytic expression of spontaneous emission, in which the triangular function relation and the first order series of sine and cosine are used respectively. The curves for the FHWM versus the reflectivity by the two expressions of FWHM in the GaAs micro-cavity are also compared.
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Hong-Dong Zhao, Mei Sun, Zhi-Long Kang, Zhi Gao, "An analytic expression of spontaneous emission FWHM in GaAs planar micro-cavity", Proc. SPIE 7846, Quantum and Nonlinear Optics, 78460N (5 November 2010); doi: 10.1117/12.868389; http://dx.doi.org/10.1117/12.868389

Gallium arsenide



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