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11 October 2010 Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors
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Abstract
Towards the development of high efficient GaN-based Vertical Cavity devices, the fabrication of cracks-free high reflective semiconductor mirrors is still an issue. For near-UV operating devices, one of the best solution is the use of AlGaN/GaN materials family. With a relatively high Al molar fraction in AlGaN, a large enough index contrast can be achieved to fabricate high reflectivity mirrors. However, the lattice mismatch between AlGaN and GaN increases with the Al molar fraction and induces a lot of cracks in the structure which affect its optical and electrical properties. Moreover, for a regrowth of an active layer on the top of the mirror, it is necessary to suppress crack generations to achieve a smooth surface. In this work, asymmetrical designs were investigated for the modeling of fully-strained AlGaN/GaN distributed Bragg Reflectors with crack-free surfaces. First, the critical thickness of MOVPE-grown AlGaN on GaN-on-sapphire templates was experimentally determined and modeled. Then, several AlGaN/GaN mirrors with various Al molar fractions and asymmetry factors were simulated demonstrating that non relaxed DBRs could be obtained with adequate parameters. Finally, it has also been shown that there is a best suited Al molar fraction in AlGaN for each DBR centering wavelength.
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T. Moudakir, M. Abid, B.-T. Doan, E. Demarly, S. Gautier, G. Orsal, J. Jacquet, A. Ougazzaden, and F. Genty "Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470B (11 October 2010); doi: 10.1117/12.871826; https://doi.org/10.1117/12.871826
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