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16 November 2010 Thermal dissipation in a laser and semiconductor optical amplifier
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Abstract
In this paper, we calculate the thermal dissipation in semiconductor Optical Amplifier. We investigate the effect of the material composition, the number of wells, the type of structure (Buried or Ridge), on the thermal resistance of the component and try to extract some rules towards minimization of temperature elevation. An increase in the number of quantum wells within the same type of structure increased the thermal resistance but not significantly. The type of source, a concentrated single source or a distributed in the different wells, does not play a significant role in the thermal resistance of a structure. The difference between Pside up or down mounted device is clear and well known. The variation of Separate Confinement Heterostructure has, in both the Pup and Pdown structures, almost no effect on the Rth. The influence of heat repartition inside the wells has been evaluated. Finally the overall heat dissipation in the optical module is calculated; the objective is to the decrease the overall electrical consumption keeping the performances required by the application.
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Joël Jacquet, Yannick Abner, Manish Choffla, Claire-Astrid Paepegaey, and Kinda Mheidly "Thermal dissipation in a laser and semiconductor optical amplifier", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470I (16 November 2010); doi: 10.1117/12.870601; https://doi.org/10.1117/12.870601
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