1.54-&#956;m electroluminescence from Si-rich erbium silicate

G. Z. Ran; Y. Yin; F. Wei; W. J. Xu; G. G. Qin

doi:10.1117/12.870220

15 November 2010 1.54-μm electroluminescence from Si-rich erbium silicate

G. Z. Ran, Y. Yin, F. Wei, W. J. Xu, G. G. Qin

Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78470X (2010) https://doi.org/10.1117/12.870220
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

We added excess silicon into erbium silicate to form silicon-rich erbium silicate (SRES) films on p-type silicon substrates by magnetron sputtering technique. After annealed at 850°C in N₂, the element contents of erbium, silicon and oxygen in the films were estimated by Rutherford backscattering spectroscopy. Room temperature Er³⁺ 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/SRES/p-Si has been studied. Its electroluminescence intensity can be markedly enhanced by optimizing the excess Si content in the SRES film.

Citation Download Citation

G. Z. Ran, Y. Yin, F. Wei, W. J. Xu, and G. G. Qin "1.54-μm electroluminescence from Si-rich erbium silicate", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470X (15 November 2010); https://doi.org/10.1117/12.870220

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available