15 November 2010 1.54-μm electroluminescence from Si-rich erbium silicate
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Abstract
We added excess silicon into erbium silicate to form silicon-rich erbium silicate (SRES) films on p-type silicon substrates by magnetron sputtering technique. After annealed at 850°C in N2, the element contents of erbium, silicon and oxygen in the films were estimated by Rutherford backscattering spectroscopy. Room temperature Er3+ 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/SRES/p-Si has been studied. Its electroluminescence intensity can be markedly enhanced by optimizing the excess Si content in the SRES film.
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G. Z. Ran, G. Z. Ran, Y. Yin, Y. Yin, F. Wei, F. Wei, W. J. Xu, W. J. Xu, G. G. Qin, G. G. Qin, } "1.54-μm electroluminescence from Si-rich erbium silicate", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78470X (15 November 2010); doi: 10.1117/12.870220; https://doi.org/10.1117/12.870220
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