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17 November 2010 Large blue shift of the absorption edge in modified potential InGaAs/InAlAs coupled quantum wells
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Abstract
We designed and experimentally reported modified potential InGaAs/InAlAs coupled quantum wells. In this structure, a large blue shift of the absorption edge of more than 35 meV is obtained at a reverse bias of -4 V. This predicts that a large negative electrorefractive index change can be achieved at longer wavelength region of the absorption edge.
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Zhixin Xu, Changrong Wang, Zhefeng Yuan, and Wei Qi "Large blue shift of the absorption edge in modified potential InGaAs/InAlAs coupled quantum wells", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78471H (17 November 2010); https://doi.org/10.1117/12.865805
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