18 November 2010 Exponential-doping GaAs NEA photocathode grown by MBE
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Proceedings Volume 7847, Optoelectronic Devices and Integration III; 78472Y (2010); doi: 10.1117/12.870665
Event: Photonics Asia 2010, 2010, Beijing, China
Abstract
To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed gradiently from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality p-type GaAs (100) substrate by MBE with p-type Be doping. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the two exponential-doping GaAs photocathode samples with different thickness reaches 1228uA/lm and 1547uA/lm respectively.
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Junju Zhang, Yijun Zhang, Yujie Du, Biao Li, Xiaoqian Fu, Benkang Chang, "Exponential-doping GaAs NEA photocathode grown by MBE", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78472Y (18 November 2010); doi: 10.1117/12.870665; https://doi.org/10.1117/12.870665
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KEYWORDS
Gallium arsenide

Doping

Electrons

Beryllium

Diffusion

Interfaces

Quantum efficiency

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