17 November 2010 Exponential-doping GaAs NEA photocathode grown by MBE
Author Affiliations +
Abstract
To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed gradiently from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality p-type GaAs (100) substrate by MBE with p-type Be doping. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the two exponential-doping GaAs photocathode samples with different thickness reaches 1228uA/lm and 1547uA/lm respectively.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junju Zhang, Junju Zhang, Yijun Zhang, Yijun Zhang, Yujie Du, Yujie Du, Biao Li, Biao Li, Xiaoqian Fu, Xiaoqian Fu, Benkang Chang, Benkang Chang, } "Exponential-doping GaAs NEA photocathode grown by MBE", Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78472Y (17 November 2010); doi: 10.1117/12.870665; https://doi.org/10.1117/12.870665
PROCEEDINGS
6 PAGES


SHARE
Back to Top