5 November 2010 Carrier relaxations in trap states of GaInNAs and HgCdTe thin films
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Proceedings Volume 7854, Infrared, Millimeter Wave, and Terahertz Technologies; 78542I (2010); doi: 10.1117/12.868777
Event: Photonics Asia 2010, 2010, Beijing, China
Degenerate pump-probe experiments have been performed with HgCdTe and GaInNAs thin films. The differential transmission versus probe delay time shows a negative value for both films, indicating photoinduced absorption from the trap states. After the negative minimum the differential transmission resumes to zero with long time constants. A rate equation formalism has been employed to model the carrier dynamics. The calculations fit the experimental differential transmission very well. The extracted time constants show that the carriers in the trap states of GaInNAs decay to the equilibrium state with a single time constant of 1.2 ns, while those in HgCdTe shows two time constants of 0.9 ns and 13 ps, respectively. This implies that there exist two types of deep level traps, fast and slow, in HgCdTe thin films.
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Fajun Ma, Zhifeng Li, Pingping Chen, Lu Chen, Wei Lu, "Carrier relaxations in trap states of GaInNAs and HgCdTe thin films", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 78542I (5 November 2010); doi: 10.1117/12.868777; https://doi.org/10.1117/12.868777

Mercury cadmium telluride

Thin films

Picosecond phenomena



Ultrafast phenomena

Gallium arsenide

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