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4 November 2010 A Thz modulator use the photo-carrier surface plasma effect
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Abstract
A design of light modulator for THz amplitude and phase modulations has been presented in this paper. Simplest versus of the Drude model is adopted, in which the collision damping is independent of the carrier energy. In our experiment, we use THz-TDS as THz source and detector. A laser whose wavelength is 808nm was used to irradiate the intrinsic Si(high-resistance), so as to let it generate the Photo-carriers ,and to influence the conductance . The Photo-carriers will change the absorption coefficient of the THz wave and also influence the dielectric of the sample, hence to control the characteristics of the THz wave in the silicon . By changing the light intensity , due to the different photon-generated carrier concentration ,the single transmission of the THz wave in the silicon wafer sample is changing remarkable . Theoretically, the modulation depth can be more than 80%. we present our design of light modulator for THz, and show the Digital simulation of our design. Also, according to this design theory, Optical/electronic integrated modulation of THz can be realized, that will be our future work.
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Pengfei Yang, Jianquan Yao, Zhigang Di, Pibin Bing, and Peng Wang "A Thz modulator use the photo-carrier surface plasma effect", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 78542M (4 November 2010); https://doi.org/10.1117/12.868890
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