4 November 2010 Carrier dynamics of doped silicon measured by femtosecond pump-terahertz probe spectroscopy
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Abstract
The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p- Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly lower than that of n-Si, due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power, the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model, showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.
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QingLi Zhou, QingLi Zhou, YuLei Shi, YuLei Shi, Tong Li, Tong Li, Bin Jin, Bin Jin, DongMei Zhao, DongMei Zhao, CunLin Zhang, CunLin Zhang, } "Carrier dynamics of doped silicon measured by femtosecond pump-terahertz probe spectroscopy", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 785430 (4 November 2010); doi: 10.1117/12.869894; https://doi.org/10.1117/12.869894
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