4 November 2010 THz/sub-THz narrow-gap semiconductor detector
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Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1-xCdxTe semiconductor bolometers that can be used as picture elements in THz sensitive arrays, are considered. The response of Hg1-xCdxTe warm-electron bolometers was measured in v=0.037-1.54 THz frequency range at T=68-300 K. Bipolar semiconductor warm-electron bolometer theoretical model was developed. In the detector considered the electromagnetic wave propagates in semiconductor waveguide, heats electrons and holes, creates their excess concentrations, as well as, the electromotive forces. These effects cause the bolometer response voltage. Experimental results confirm the model main conclusions. Because of response time defined by carrier recombination time in HgCdTe layers (τ~10-8-10-6 s) and the noise equivalent power that can reach NEP300 K~4×10-10 W/Hz1/2 in mm-wave region, the arrays on the base of HgCdTe bolometers can make them promising for active relatively fast frame rate sensitive applications. At liquid nitrogen temperature NEP can lowering up to NEP77 K~10-11 W/Hz1/2. Embeded p-n-junctions in HgCdTe can increase the detectors responsivity by an order.
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F. Sizov, V. Dobrovolsky, V. Zabudsky, N. Momot, Z. Tsybrii, N. Michailov, S. Dvoretskii, "THz/sub-THz narrow-gap semiconductor detector", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 785433 (4 November 2010); doi: 10.1117/12.869983; https://doi.org/10.1117/12.869983

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