4 November 2010 Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy
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Abstract
The ultrafast carrier dynamics and surface photoconductivity of unbiased semi-insulating GaAs have been investigated in detail by using terahertz pump-emission technique. Through theoretical modeling based on Hertz vector potential, it is found that transient photoconductivity plays a very important role in the temporal waveform of terahertz radiation pulse. Anomalous enhancement in both terahertz radiation and transient photoconductivity is observed subsequent to the excitation of pump pulse, and our modeling gives successful analyses for the dynamics of photogenerated carriers in the GaAs. We attribute these phenomena to carrier capture in the EL2 centers. Moreover, the pump power- and temperaturedependent measurements are also performed to verify this model.
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Yulei Shi, Yulei Shi, Qing-li Zhou, Qing-li Zhou, Cunlin Zhang, Cunlin Zhang, } "Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy", Proc. SPIE 7854, Infrared, Millimeter Wave, and Terahertz Technologies, 78543B (4 November 2010); doi: 10.1117/12.870162; https://doi.org/10.1117/12.870162
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