Optical Control Of Millimeter Wave Devices

Harold R Fetterman; Wei-Yu Wu; David Ni

doi:10.1117/12.940718

9 November 1987 Optical Control Of Millimeter Wave Devices

Harold R Fetterman, Wei-Yu Wu, David Ni

Proceedings Volume 0789, Optical Technology for Microwave Applications III; (1987) https://doi.org/10.1117/12.940718
Event: 1987 Technical Symposium Southeast on Optics, Electro-Optics, and Sensors, 1987, Orlando, FL, United States

Abstract

Coherent mixing of optical radiation from a tunable CW ring dye laser and a stablized HeNe laser was used to inject broadband microwave signals into GaAs MESFETs (FETs), AlGaAs-GaAs HEMTs and monolithic FET amplifiers up to 55 GHz. Using this technique, amplification of an optically injected signal at 32 GHz, direct injection locking of a 17 GHz GaAs oscillator, and frequency tuning of a 40 GHz oscillator by laser intensity modulation were demonstrated. Comparison of the millimeter wave frequency generation mechanism, noise sources and system performance with other techniques used for signal synchronization and distributed control application are discussed.

Citation Download Citation

Harold R Fetterman, Wei-Yu Wu, and David Ni "Optical Control Of Millimeter Wave Devices", Proc. SPIE 0789, Optical Technology for Microwave Applications III, (9 November 1987); https://doi.org/10.1117/12.940718

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