16 February 2011 A compact optically pumped semiconductor laser emitting at 593 nm
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Proceedings Volume 7912, Solid State Lasers XX: Technology and Devices; 79120G (2011); doi: 10.1117/12.879229
Event: SPIE LASE, 2011, San Francisco, California, United States
Abstract
We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short upperstate lifetime of the OPS, the generated 593nm output power was stable.A
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Ruediger von Elm, Soenke Offen, Wolf Seelert, Vasiliy Ostroumov, Dirk Mohrenstecher, Joachim Brunn, "A compact optically pumped semiconductor laser emitting at 593 nm", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (16 February 2011); doi: 10.1117/12.879229; https://doi.org/10.1117/12.879229
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KEYWORDS
Neodymium lasers

Crystals

Semiconductor lasers

Diodes

Optical pumping

Sum-frequency generation

Mirrors

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