3 March 2011 747 nm Pr:YAP microchip-laser output characteristics
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Abstract
Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25%.
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Martin Fibrich, Martin Fibrich, Helena Jelínková, Helena Jelínková, Jan Šulc, Jan Šulc, Karel Nejezchleb, Karel Nejezchleb, Václav Škoda, Václav Škoda, } "747 nm Pr:YAP microchip-laser output characteristics", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (3 March 2011); doi: 10.1117/12.873046; https://doi.org/10.1117/12.873046
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