3 March 2011 747 nm Pr:YAP microchip-laser output characteristics
Author Affiliations +
Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25%.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Fibrich, Martin Fibrich, Helena Jelínková, Helena Jelínková, Jan Šulc, Jan Šulc, Karel Nejezchleb, Karel Nejezchleb, Václav Škoda, Václav Škoda, } "747 nm Pr:YAP microchip-laser output characteristics", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (3 March 2011); doi: 10.1117/12.873046; https://doi.org/10.1117/12.873046


Back to Top