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3 March 2011 747 nm Pr:YAP microchip-laser output characteristics
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Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25%.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, and Václav Škoda "747 nm Pr:YAP microchip-laser output characteristics", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79121X (3 March 2011);


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