18 February 2011 Compact tunable kHz-linewidth semiconductor laser stabilized with a whispering-gallery mode microresonator
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Proceedings Volume 7913, Laser Resonators and Beam Control XIII; 79131G (2011) https://doi.org/10.1117/12.895033
Event: SPIE LASE, 2011, San Francisco, California, United States
Abstract
We report on the realization of a compact-package (44x27x14mm) narrow linewidth laser based on self-injection locking of a distributed feedback semiconductor diode laser to a high-Q whispering gallery mode resonator fabricated with electro-optic material. The packaged device operates at 1,550 nm and offers instantaneous spectral linewidth performance smaller than 1.8 kHz for 3 mW of output power. We are able to tune the laser frequency by applying voltage to the resonator. This suggest that the technology enables fabrication of ultra narrow linewidth semiconductor lasers in a broad wavelength range of 390 nm to 2,900 nm. The laser source in a compact footprint enables a multitude of sensing, monitoring, and metrology applications where high resolution and precision and absolute accuracy are required.
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V. S. Ilchenko, V. S. Ilchenko, E. Dale, E. Dale, W. Liang, W. Liang, J. Byrd, J. Byrd, D. Eliyahu, D. Eliyahu, A. A. Savchenkov, A. A. Savchenkov, A. B. Matsko, A. B. Matsko, D. Seidel, D. Seidel, L. Maleki, L. Maleki, } "Compact tunable kHz-linewidth semiconductor laser stabilized with a whispering-gallery mode microresonator", Proc. SPIE 7913, Laser Resonators and Beam Control XIII, 79131G (18 February 2011); doi: 10.1117/12.895033; https://doi.org/10.1117/12.895033
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