21 February 2011 Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser
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Abstract
We demonstrate a frequency doubled dual-gain quantum dot semiconductor disk laser operating at 590 nm. The reflective gain element, grown by molecular beam epitaxy, has active region composed of 39 layers of InGaAs Stranski- Krastanov quantum dots. The gain mirrors produce individually 3 W and 4 W of output power while the laser with both elements in a single cavity reveals 6 W at 1180 nm with beam quality factor of M2<1.2. The loss induced by the nonlinear crystal is compensated by gain boosting in the dual-gain laser and 2.5 W of output power at 590 nm was achieved after frequency conversion.
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J. Rautiainen, J. Rautiainen, I. Krestnikov, I. Krestnikov, J. Nikkinen, J. Nikkinen, O. G. Okhotnikov, O. G. Okhotnikov, } "Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser", Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 791702 (21 February 2011); doi: 10.1117/12.873166; https://doi.org/10.1117/12.873166
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