Reliable high-power long-pulse 8XX-nm diode laser bars and arrays operating at high temperature

Li Fan; Chuanshun Cao; Gerald Thaler; Dustin Nonnemacher; Feliks Lapinski; Irene Ai; Brian Caliva; Suhit Das; Robert Walker; Linfei Zeng; Mark McElhinney; Prabhu Thiagarajan

doi:10.1117/12.871184

21 February 2011 Reliable high-power long-pulse 8XX-nm diode laser bars and arrays operating at high temperature

Li Fan, Chuanshun Cao, Gerald Thaler, Dustin Nonnemacher, Feliks Lapinski, Irene Ai, Brian Caliva, Suhit Das, Robert Walker, Linfei Zeng, Mark McElhinney, Prabhu Thiagarajan

Author Affiliations +

Proceedings Volume 7918, High-Power Diode Laser Technology and Applications IX; 791805 (2011) https://doi.org/10.1117/12.871184
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

We report on the high-power high-temperature long-pulse performance of the 8XX-nm diode laser bars and arrays, which were recently developed at Lasertel Inc. for diode laser pumping within high-temperature (130 °C) environment without any cooling. Since certain energy in each pulse is required, the diode laser bars have to provide both high peak power and a nice pulse shape at 130 °C. Optimizing the epi-structure of the diode laser, the laser cavity and the distribution of waste heat, we demonstrate over 40-millisecond long-pulse operation of the 8XX-nm CS bars at 130 °C and 100 A. Pumping the bar with 5-Hz frequency 15-millisecond rectangular current pulses, we generate over 60 W peak power at 100 A and 130 °C. During the pulse duration, the pulse shape of the CS bars is well-maintained and the power almost linearly decays with a rate of 1.9% peak power per millisecond at 130 °C and 100 A. Regardless of the pulse shape, this laser bar can lase at very high temperature and output pulse can last for 8 ms/2ms at 170 °C/180 °C (both driven by 60 A current pulses with 5-Hz frequency, 10 millisecond pulse width), respectively. To the best of our knowledge, this is the highest operating temperature for a long-pulse 8XX-nm laser bar. Under the condition of 130 °C and 100 A, the laser bars do not show any degradation after 310,000 10-millisecond current pulse shots. The performance of stack arrays at 130 °C and 100 A are also presented. The development of reliable high-temperature diode laser bar paves the way for diode laser long-pulse pumping within a high-temperature environment without any cooling.

Citation Download Citation

Li Fan, Chuanshun Cao, Gerald Thaler, Dustin Nonnemacher, Feliks Lapinski, Irene Ai, Brian Caliva, Suhit Das, Robert Walker, Linfei Zeng, Mark McElhinney, and Prabhu Thiagarajan "Reliable high-power long-pulse 8XX-nm diode laser bars and arrays operating at high temperature", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791805 (21 February 2011); https://doi.org/10.1117/12.871184

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