21 February 2011 QCW diode array reliability at 80x and 88x nm
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Proceedings Volume 7918, High-Power Diode Laser Technology and Applications IX; 791808 (2011); doi: 10.1117/12.873467
Event: SPIE LASE, 2011, San Francisco, California, United States
Northrop Grumman Cutting Edge Optronics (NGCEO) has recently developed high-power laser diode arrays specifically for long-life operation in quasi-CW applications. These arrays feature a new epitaxial wafer design that utilizes a large optical cavity and are packaged using AuSn solder and CTE-matched heat sinks. This work focuses on life test matrix of multiple epitaxial structures, multiple wavelengths, and multiple drive currents. Particular emphasis is given to the 80x and 88x wavelength bands running at 100-300 Watts per bar. Reliable operating points are identified for various applications including range finding (product lifetimes less than 1 billion shots) and industrial machining (product lifetimes greater than 20 billion shots). In addition to life test data, a summary of performance data for each epitaxial structure and each bar design is also presented.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan Feeler, Jeremy Junghans, Joseph Levy, Don Schnurbusch, Ed Stephens, "QCW diode array reliability at 80x and 88x nm", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791808 (21 February 2011); doi: 10.1117/12.873467; https://doi.org/10.1117/12.873467

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