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21 February 2011 Variation of refractive index step of 635nm ridge waveguide lasers for optimized index guiding
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Abstract
We report on experimental and theoretical investigations concerning the influence of the ridge etching depth and the corresponding effective refractive index step on the electro-optical properties of ridge waveguide diode lasers emitting near 635 nm. We observe a suppression of higher order lateral modes for larger steps in effective index leading to a more homogeneous far field, as required e.g. in "flying spot" display applications. With the proper design choice, a total optical output power of P > 200 mW at 638 nm and 15°C and a beam quality M² < 2 could be achieved.
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D. Feise, G. Blume, Chr. Kaspari, K. Paschke, and G. Erbert "Variation of refractive index step of 635nm ridge waveguide lasers for optimized index guiding", Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791812 (21 February 2011); https://doi.org/10.1117/12.873397
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