21 February 2011 High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure
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Abstract
We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.
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Alexander R. Albrecht, Alexander R. Albrecht, Thomas J. Rotter, Thomas J. Rotter, Christopher P. Hains, Christopher P. Hains, Andreas Stintz, Andreas Stintz, Guofeng Xin, Guofeng Xin, Tsuei-Lian Wang, Tsuei-Lian Wang, Yushi Kaneda, Yushi Kaneda, Jerome V. Moloney, Jerome V. Moloney, Kevin J. Malloy, Kevin J. Malloy, Ganesh Balakrishnan, Ganesh Balakrishnan, } "High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 791904 (21 February 2011); doi: 10.1117/12.874321; https://doi.org/10.1117/12.874321
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