21 February 2011 Lattice mismatched growth for mid-IR VECSELs
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Abstract
We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.
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G. Balakrishnan, T. J. Rotter, P. Ahirwar, S. P. Clark, V. Patel, A. Albrecht, C. P. Hains, Yi-Ying Lai, T. L. Wang, J. M. Yarborough, D. Mathine, Yushi Kaneda, Jerome V. Moloney, Jörg Hader, S. W. Koch, "Lattice mismatched growth for mid-IR VECSELs", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190G (21 February 2011); doi: 10.1117/12.874234; https://doi.org/10.1117/12.874234
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