21 February 2011 Lattice mismatched growth for mid-IR VECSELs
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We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.
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G. Balakrishnan, G. Balakrishnan, T. J. Rotter, T. J. Rotter, P. Ahirwar, P. Ahirwar, S. P. Clark, S. P. Clark, V. Patel, V. Patel, A. Albrecht, A. Albrecht, C. P. Hains, C. P. Hains, Yi-Ying Lai, Yi-Ying Lai, T. L. Wang, T. L. Wang, J. M. Yarborough, J. M. Yarborough, D. Mathine, D. Mathine, Yushi Kaneda, Yushi Kaneda, Jerome V. Moloney, Jerome V. Moloney, Jörg Hader, Jörg Hader, S. W. Koch, S. W. Koch, } "Lattice mismatched growth for mid-IR VECSELs", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190G (21 February 2011); doi: 10.1117/12.874234; https://doi.org/10.1117/12.874234

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