Doping Characteristics Of ZnSe-ZnTe Strained Layer Superlattice Grown By Molecular Beam Epitaxy

R. Kimura; S. Dosho; A. Imai; M. Kobayashi; M. Konagai; K. Takahashi

doi:10.1117/12.940827

11 August 1987 Doping Characteristics Of ZnSe-ZnTe Strained Layer Superlattice Grown By Molecular Beam Epitaxy

R. Kimura, S. Dosho, A. Imai, M. Kobayashi, M. Konagai, K. Takahashi

Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940827
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

In order to obtain both p- and n-type conduction in a wide-bandgap II-VI compound semiconductor, we have prepared ZnSe-ZnTe strained-layer superlattices (SLS) by MBE with a modulation doping technique. Modulation-doped superlattices were analyzed by photoluminescence (PL) and the van der Pauw method. The effect of strain on the film quality induced in the SLS structure by lattice mismatch was investigated. Furthermore, the SLS structure has been directly observed by Transmission Electron Microscopy (TEM).

Citation Download Citation

R. Kimura, S. Dosho, A. Imai, M. Kobayashi, M. Konagai, and K. Takahashi "Doping Characteristics Of ZnSe-ZnTe Strained Layer Superlattice Grown By Molecular Beam Epitaxy", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940827

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