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11 August 1987 Infrared Intersubband Absorption At 8.2 μm In Doped Superlattices Of GaAs/AlAs
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940835
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Intersubband absorption has been measured in a 50 period superlattice composed 71 Å GaAs wells separated by 30 Å barriers of AlAs. The peak absorption was observed at 1224 cm-1 corresponding to 8.2 μm. The absorbed oscillation strength was extremely large in agree-ment with theory. Using a different superlattice having AlxGal-xAs barriers, we fabricated a detector sensitive to 10 μm infrared radiation. It had a responsivity of R= 0.52 A/W, and a narrow band spectral response of Δλ/λ = 10%.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. F. Levine, R. J. Malik, J. Walker, K. K. Choi, and C. G. Bethea "Infrared Intersubband Absorption At 8.2 μm In Doped Superlattices Of GaAs/AlAs", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940835
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