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11 August 1987 On The Einstein relation In Superlattices Of Kane - Type Semiconductors In The Presence Of A Quantizing Magnetic Field
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940846
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The Einstein relation for the diffusivity-mobility ratio of the carriers in semiconductors (hereeafter referred to as DMR) is a very important one, since by being a thermo-dynamic relation this is independent of any scattering mechanisms and also since one can determine the diffusivity from this relation by knowing the mobility and vice-versa. besides, the simplest method of analyzing semiconductor devices taking into account the degeneracy of the bands is to use the DMR to express the performance at the device terminals and the switching speed in terms of carrier concentration.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. N. Biswas and K. P. Ghatak "On The Einstein relation In Superlattices Of Kane - Type Semiconductors In The Presence Of A Quantizing Magnetic Field", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940846
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