Photoluminescence Studies Of Coupled Quantum Well Structures In The AlGaAs/GaAs System

A. Torabi; K. F. Brennan; C. J. Summers

doi:10.1117/12.940834

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11 August 1987 Photoluminescence Studies Of Coupled Quantum Well Structures In The AlGaAs/GaAs System

A. Torabi, K. F. Brennan, C. J. Summers

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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940834
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The interaction between two closely spaced quantum well (QW) structures has been studied by observing the change in photoluminescence (PL) energy as a function of the barrier thickness between the wells. Theoretical model and experimental results agree to within a few meV for these structures. The strongest coupling is for the narrowest wells and the thinnest barrier. Only the symmetric <----> symmetric transition between the n=1 states of the confined electron and heavy hole states was observed.

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A. Torabi, K. F. Brennan, and C. J. Summers "Photoluminescence Studies Of Coupled Quantum Well Structures In The AlGaAs/GaAs System", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940834

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