11 August 1987 Reduction Of Photoluminescence Intensity With Magnetic Field In InGaAs/GaAs Single Strained Layer Quantum Wells
Author Affiliations +
Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940829
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The photoluminescence intensity of InGaAs/GaAs strained layer single quantum wells with p-type doping was measured as a function of magnetic field. Two different experimental techniques were used, and both show a reduction of intensity with complete suppression occurring at B=35T. Self-consistent potential and energy level calculations indicate complete migration of charge out of the well back to the dopants as a consequence of applied magnetic field.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. C. Smith, M. C. Smith, E. D. Jones, E. D. Jones, J. E. Schirber, J. E. Schirber, T. J. Drummond, T. J. Drummond, D. Heiman, D. Heiman, S. Foner, S. Foner, } "Reduction Of Photoluminescence Intensity With Magnetic Field In InGaAs/GaAs Single Strained Layer Quantum Wells", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940829; https://doi.org/10.1117/12.940829
PROCEEDINGS
5 PAGES


SHARE
Back to Top