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11 August 1987 Uniaxial Stress As A Probe Of Valence Subband Mixing In Semiconductor Quantum Wells
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940837
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We present strong experimental evidence of interactions between light-hole and heavy-hole valence subbands in a GaAs/A1GaAs quantum well subjected to compressive uniaxial stress. The energies of higher order exciton states were determined as a function of stress using low temperature photoluminescence excitation spectra. Level repulsions, which are signatures of valence subband mixing, were observed between a number of light-hole and heavy-hole exciton states. A theoretical model, based on the Luttinger-Kohn and strain Hamiltonians, yielded results in substantial agreement with the experimental data. The cause of the main discrepancy, an anomalously strong level repulsion between the lowest energy light-hole exciton and a parity-allowed "forbidden" exciton, is not yet clear but possible explanations are discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emil S. Koteles, C. Jagannath, Johnson Lee, and M. O. Vassell "Uniaxial Stress As A Probe Of Valence Subband Mixing In Semiconductor Quantum Wells", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940837
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