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21 February 2011 A study on 8 beam laser diode to adopt laser scanning unit
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Abstract
In this paper, next generation 780nm monolithic individually addressable 8 beam diode laser with 10mW optical power for laser scanning unit were developed. Beam to beam spacing is 30μm and air bridge interconnection process was developed for individual operations. Measured average values of threshold current(Ith), operating current(Iop), operating voltage(Vop), slope efficiency(SE), horizontal beam divergence(FFH), vertical beam divergence(FFV), and peak wavelength(λ) from 5 specimens are 14.91mA, 28.79mA, 1.91V, 0.72mW/mA, 8.28°, 31.89°, and 785.67nm respectively. Major electro-optic parameters from 8 emitters are within 3% variation for each device. Also we measured power droop that had a strong influence on printing image at 600Hz with duty 10% and 90% and we can obtained droop rate within 2% in each channel at room temperature and 10mW power. From 500Hr reliability life test result at 70°C, we obtained Iop variation within 1% in each channel with 10mw power. From the experimental measurement results, we can assure that the developed 8 beam diode laser is suitable optical source for high speed laser scanning unit in multi-function printing system and laser beam printers.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dae-Gwon Song, Jong-Keun Park, Jung-Hyun Park, An-Sik Choi, and Tae-Kyung Kim "A study on 8 beam laser diode to adopt laser scanning unit", Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79200X (21 February 2011); https://doi.org/10.1117/12.874273
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