Paper
21 February 2011 Patterning of aluminum thin films by 157nm F2 laser
K. Iwai, M. Okoshi, H. Nojiri, N. Inoue
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Abstract
A 157 nm F2 laser was used for the surface and interface modifications of Al thin films on silica glass substrate for fabricating a pattern of Al thin films. The F2-laser irradiated surface swelled remarkably by inducing the strong oxidation reaction of Al thin films to form Al2O3 protective layer. High adhesion strength of 663 kgf/cm2 between Al and silica glass was also obtained for the F2-laser-irradiated sample, compared with the cases in the ArF-laser irradiated, fourth harmonic of Nd:YAG-laser irradiated and nonirradiated samples of 326, 19 and 16 kgf/cm2, respectively. Thus, the F2- laser irradiated sample showed high abrasion resistance for embossing a fine pattern of Al thin films on silica glass. Mechanism of the F2-laser-induced surface and interface modifications was discussed, comparing with the cases in the ArF laser and fourth harmonic of Nd:YAG laser.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Iwai, M. Okoshi, H. Nojiri, and N. Inoue "Patterning of aluminum thin films by 157nm F2 laser", Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79201B (21 February 2011); https://doi.org/10.1117/12.879788
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Cited by 2 scholarly publications.
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KEYWORDS
Aluminum

Thin films

Silica

Glasses

Nd:YAG lasers

Laser irradiation

Optical lithography

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