21 February 2011 Patterning of aluminum thin films by 157nm F2 laser
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Abstract
A 157 nm F2 laser was used for the surface and interface modifications of Al thin films on silica glass substrate for fabricating a pattern of Al thin films. The F2-laser irradiated surface swelled remarkably by inducing the strong oxidation reaction of Al thin films to form Al2O3 protective layer. High adhesion strength of 663 kgf/cm2 between Al and silica glass was also obtained for the F2-laser-irradiated sample, compared with the cases in the ArF-laser irradiated, fourth harmonic of Nd:YAG-laser irradiated and nonirradiated samples of 326, 19 and 16 kgf/cm2, respectively. Thus, the F2- laser irradiated sample showed high abrasion resistance for embossing a fine pattern of Al thin films on silica glass. Mechanism of the F2-laser-induced surface and interface modifications was discussed, comparing with the cases in the ArF laser and fourth harmonic of Nd:YAG laser.
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K. Iwai, M. Okoshi, H. Nojiri, N. Inoue, "Patterning of aluminum thin films by 157nm F2 laser", Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79201B (21 February 2011); doi: 10.1117/12.879788; https://doi.org/10.1117/12.879788
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