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21 February 2011 Formation of Si and Ge films and micropatterns by wet process using laser direct writing method
Akira Watanabe
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Proceedings Volume 7921, Laser-based Micro- and Nanopackaging and Assembly V; 792105 (2011) https://doi.org/10.1117/12.873281
Event: SPIE LASE, 2011, San Francisco, California, United States
Abstract
The studies toward the formation of Si and Ge films and micropatterns by wet process using laser direct writing method are reported. First is the the formation of Si film by laser scanning irradiation to Si nano- or micro-particle dispersed films. By using organogermanium nanocluster (OrGe) as a dispersion medium of Si particles, a homogeneous Si film was formed by laser scanning irradiation on a Si particle/OrGe composite film. The micro-Raman spectra showed the formation of the polycrystalline Ge and SiGe alloy during the fusion of the Si particles by laser irradiation. The second is the formation of the Si and Ge micropatterns by LLDW (liquid phase laser direct writing) method. Micro-Raman spectra showed the formation of polycrystalline Si and Ge micropatterns by laser irradiation on the interfaces of SiCl4/substrate and GeCl4/substrate, respectively.
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Akira Watanabe "Formation of Si and Ge films and micropatterns by wet process using laser direct writing method", Proc. SPIE 7921, Laser-based Micro- and Nanopackaging and Assembly V, 792105 (21 February 2011); https://doi.org/10.1117/12.873281
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