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11 February 2011 On the damage behaviour of Al2O3 insulating layers in thin film systems for the fabrication of sputtered strain gauges
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Abstract
We report on ablation experiments of sputter deposited thin film systems of NiCr and Al2O3 for the fabrication of strain sensors. To ensure proper functionality of the electrical circuits, the metal film has to be selectively removed while damage in the Al2O3 films has to be avoided. Damage thresholds of the Al2O3 layer are investigated and damage mechanisms are discussed. Damage thresholds decrease with increasing number of scans until reaching a constant value. The processing window defined as the ratio of Al2O3 damage threshold and NiCr ablation threshold increases with increasing film thickness and number of scans.
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Oliver Suttmann, Ulrich Klug, and Rainer Kling "On the damage behaviour of Al2O3 insulating layers in thin film systems for the fabrication of sputtered strain gauges", Proc. SPIE 7925, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XI, 792515 (11 February 2011); doi: 10.1117/12.876134; https://doi.org/10.1117/12.876134
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