14 February 2011 Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching
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Abstract
An electrostatic-actuated suspended bridge structure composed by single-crystalline silicon carbide (SiC) is fabricated. The structure is entirely made of homoepitaxially grown single-crystalline 4H-SiC. Electrical isolation between the suspended bridge and the base plate is established with a pnp junction formed by multiple ion implantation. The structure is fabricated by a combination of reactive ion etching (RIE) and doping-selective photoelectrochemical (PEC) etching. The suspended bridge is actuated by applying a voltage between the bridge and the base plate.
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Naoki Watanabe, Tsunenobu Kimoto, Jun Suda, "Fabrication of electrostatic-actuated single-crystalline 4H-SiC bridge structures by photoelectrochemical etching", Proc. SPIE 7926, Micromachining and Microfabrication Process Technology XVI, 79260B (14 February 2011); doi: 10.1117/12.874543; https://doi.org/10.1117/12.874543
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