3 August 1987 Monte Carlo Investigation Of Carrier-Carrier Interaction And Ultrafast Cooling Of Hot Photoexcited Carriers In GaAs
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Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940868
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.
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M . A . Osman, M . A . Osman, H. L. Grubin, H. L. Grubin, J. P. Kreskovsky, J. P. Kreskovsky, D. K. Ferry, D. K. Ferry, } "Monte Carlo Investigation Of Carrier-Carrier Interaction And Ultrafast Cooling Of Hot Photoexcited Carriers In GaAs", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940868; https://doi.org/10.1117/12.940868
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