Picosecond Characterization Of Semiconductor Lasers

A. P. DeFonzo

doi:10.1117/12.940873

3 August 1987 Picosecond Characterization Of Semiconductor Lasers

A. P. DeFonzo

Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940873
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

A review of ultrafast techniques of characterizing ultra-high-speed semiconductor lasers is presented. The origin of nonlinear gain effects and their influence on the direct modulation bandwidth is discussed.

Citation Download Citation

A. P. DeFonzo "Picosecond Characterization Of Semiconductor Lasers", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); https://doi.org/10.1117/12.940873

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