3 August 1987 Picosecond Investigations Of High-Density Carrier Dynamics In Alloy Semiconductors
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Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940861
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We examine the influence of dense electron-hole plasmas on the optical properties of AlxGa1-xAs for a variety of x-values using transient transmission spectroscopy and time-resolved photoluminescence. The measurements provide evidence for band-filling, nonlinear refraction, induced absorption, alloy disorder, and band-gap renormalization. The band gap renormalization is compared to existing theory, and good agreement is obtained by considering the influence of alloy disorder and the separate contributions of exchange and correlation.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas F. Boggess, Thomas F. Boggess, H. Kalt, H. Kalt, K. Bohnert, K. Bohnert, D. P. Norwood, D. P. Norwood, Arthur L. Smirl, Arthur L. Smirl, Irnee D'Haenens, Irnee D'Haenens, } "Picosecond Investigations Of High-Density Carrier Dynamics In Alloy Semiconductors", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940861; https://doi.org/10.1117/12.940861
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