Transient Electronic Energy Relaxation And Excitonic Phenomena In II-VI Compound Semiconductor Superlattices

A. V. Nurmikko

doi:10.1117/12.940858

3 August 1987 Transient Electronic Energy Relaxation And Excitonic Phenomena In II-VI Compound Semiconductor Superlattices

A. V. Nurmikko

Author Affiliations +

Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940858
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The application of time-resolved luminescence techniques is illustrated for two superlattice structures, based on ZnSe/(Zn,Mn)Se and CdTe/ZnTe heteropairs, respectively, In the quantum well limit, both structures share in common strong excitonic character in their recombination spectra at low lattice temperatures. In the (Zn,Mn)Se the Mn-ion d-electron transition provides an alternate path for electronic energy relaxation. More generally, in II-VI strained layer superlattices with small valence band offset we find that excitonic localization phenomena are important and are directly accessible through time-resolved study.

Citation Download Citation

A. V. Nurmikko "Transient Electronic Energy Relaxation And Excitonic Phenomena In II-VI Compound Semiconductor Superlattices", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); https://doi.org/10.1117/12.940858

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