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3 August 1987 Transient Gratings In Wide Band Gap Semiconductors -Impurities And Optical Phonon Dynamics-
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Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940875
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Picosecond degenerate and nondegenerate transient gratings in wide band gap crystals are reviewed. The concepts focus on how these transient gratings can be used as spectroscopic tools to investigate the dynamics of photogenerated electron-holes to impurities in ZnSe:Cu, and coherent optical phonons. The nondegenerate moving transient grating method is used to generate Raman spectra of LiNbO3 and CaCO3 spanning 2000 cm-1 in a single 30 ps. pulse. A new real time phonon dynamic technique using these gratings in conjunction with a streak camera is discussed. This technique is used to measure the dephasing of the coherent optical phonons in CaCO3 of 7.5 ps. and LiNbO3, with a temporal resolution of 2 ps.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. J. Delfyett, R. Dorsinville, and R. R. Alfano "Transient Gratings In Wide Band Gap Semiconductors -Impurities And Optical Phonon Dynamics-", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940875; https://doi.org/10.1117/12.940875
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