21 February 2011 Simulation of nipi photovoltaic devices
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Abstract
The simulation and characterization of multi-period GaAs n-type/intrinsic/p-type/intrinsic (nipi) doping structure solar cells has been demonstrated. The nipi device depends almost exclusively on drift rather than diffusion currents to collect the carriers. This architecture has been proposed to increase the radiation hardness of a device due to a decreased dependence upon diffusion length. This doping superlattice will allow photo generated carriers to be rapidly transported through the junction by drift. Converting them to majority carriers, and subsequently conducted laterally to selective contacts positioned at opposite sides of etched V-groove channels in the device. The result is a parallel connected multiperiod solar cell, which has been evaluated extensively under simulation. The nipi solar cells have been simulated, giving a greater understanding of the physical mechanisms at work in the device. Design variables such as finger spacing, doping concentration, nipi stack thickness, and the doped to intrinsic thickness ratio are varied to optimize the device. These results show the nipi device has great promise for development as a high efficiency solar cell, with the potential to be used in applications where radiation hardness is required, such as satellite power systems or radioisotope batteries.
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M. A. Slocum, M. A. Slocum, D. V. Forbes, D. V. Forbes, C. D. Cress, C. D. Cress, S. Polly, S. Polly, S. M. Hubbard, S. M. Hubbard, } "Simulation of nipi photovoltaic devices", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793305 (21 February 2011); doi: 10.1117/12.876949; https://doi.org/10.1117/12.876949
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