21 February 2011 Investigation of spectral responsivity of InAs QD-embedded GaAs solar cells
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Proceedings Volume 7933, Physics and Simulation of Optoelectronic Devices XIX; 793313 (2011); doi: 10.1117/12.880499
Event: SPIE OPTO, 2011, San Francisco, California, United States
GaAs p-i-n solar cells embedded with varying number of QD layers (0-60) were grown by OMVPE. 1x1 cm2 cells were fabricated and standard solar cell testing was performed. Illuminated AM0 current-voltage characteristics were measured of both a baseline and 10-layer quantum dot (QD) embedded GaAs p-i-n. The QD solar cell (QDSC) gave an short circuit current of 23.1 mA/cm2 increase in of 0.7mA/cm2 above the baseline with no QDs. The QD embedded cell also showed limited loss in open circuit voltage characteristics of 0.99 V compared to 1.04 V of the baseline. Conversion efficiencies were 13.4 and 13.8 for the QDSC and baseline solar cell, respectively. Spectral responsivity measurements revealed equivalent GaAs response in the visible for the baseline, 10x and 20x layer QD samples, while systematically degraded emitter lifetime was found to be responsible for loss in visible responsivities for the 60x QDSC. Sub-GaAs bandgap response gave a systematic increase of 0.25 mA/QD layer. Spectral responsivity modeling was used and found that bulk GaAs emitter and i-region lifetimes degraded from 102 ns to 102 ps, with increasing number of QD layers.
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Christopher G. Bailey, David V. Forbes, Ryne P. Raffaelle, Seth M. Hubbard, "Investigation of spectral responsivity of InAs QD-embedded GaAs solar cells", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793313 (21 February 2011); doi: 10.1117/12.880499; https://doi.org/10.1117/12.880499

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