As long ago as the 1960s, scientists understood that Diode lasers' oscillation wavelengths showed a
significant shift to the shorter wavelength (high frequency) side, when exposed to strong (<4[T])
magnetic fields, at extremely low temperatures (<80[K]). Not surprisingly, then, in preliminary tests,
when we exposed Fabry/Perot-type diode lasers oscillating at 780[nm] to weak magnetic fields (<1.4[T]),
at room temperature (300[K]), we observed that the oscillation wavelength shifted to the longer (low
frequency) wavelength side. In the present work, we used vertical-cavity surface-emitting lasers (VCSEL)
to check whether its change into the shorter wavelength side takes place.
In discussions of shift mechanisms, we consider how wavelength (frequency) and optical output-power
shifts are correlated. Our expanded knowledge base has forced us to use a completely different
mechanism to explain how/why our results differ from those obtained in studies conducted in the 1960's.
We are now introducing a mechanism that affects a rise in temperature and an increase in the carrier
density, affect the characteristic shifts observed in our experiments, when a magnetic field is applied to
the laser diodes parallel to the injection current.