21 February 2011 Modeling the evolution of quantum optical states in optoelectronic devices
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Proceedings Volume 7933, Physics and Simulation of Optoelectronic Devices XIX; 79331V (2011); doi: 10.1117/12.873053
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
We have developed a quantum trajectory model for describing the evolution of an optical mode interacting with optoelectronic devices. Our model includes the field-material coupling, the pumping rate of the material, the loss rate of the material, and also the mirror losses of the cavity. We derive a relation between the model parameters and semiconductor material and device properties and apply the model to calculate the photon statistics of semiconductor devices. We show that depending on the material and device parameters the setup can operate as a light emitting diode or as a laser. In addition to the steady state solutions, the model can be applied to calculate the transient phenomena of the density operator of the optical field. It can also be applied to model the single photon detectors coupled to a cavity field.
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Teppo Häyrynen, Jani Oksanen, Jukka Tulkki, "Modeling the evolution of quantum optical states in optoelectronic devices", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79331V (21 February 2011); doi: 10.1117/12.873053; https://doi.org/10.1117/12.873053
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KEYWORDS
Instrument modeling

Semiconductors

Statistical modeling

Optoelectronic devices

Absorption

Systems modeling

Light emitting diodes

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