1550 nm DFB semiconductor lasers with high power and low noise

Yi-Guang Zhao; Anguel Nikolov; Raj Dutt

doi:10.1117/12.873973

21 February 2011 1550 nm DFB semiconductor lasers with high power and low noise

Yi-Guang Zhao, Anguel Nikolov, Raj Dutt

Proceedings Volume 7933, Physics and Simulation of Optoelectronic Devices XIX; 79332J (2011) https://doi.org/10.1117/12.873973
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We present a high power and low noise DFB laser design. The laser has good performance with output power over 200 mW, side-mode suppression ratio over 50 dB, and related intensity noise (RIN) less than -165 dB/Hz in a wide frequency range. We have modeled the performance of Buried Heterostructure (BH) laser and ridge-waveguide laser. Since the BH laser has a build-in index guiding waveguide, the laser mode is very stable, the relaxation oscillations are suppressed, resulting in peak RIN which is much lower than that of the ridge-waveguide laser. In addition, the BH laser has good confinement of the injected carriers in the cavity, the laser threshold current is very low, and the RIN peak is pushed to high frequency at high bias.

Citation Download Citation

Yi-Guang Zhao, Anguel Nikolov, and Raj Dutt "1550 nm DFB semiconductor lasers with high power and low noise", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79332J (21 February 2011); https://doi.org/10.1117/12.873973

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