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21 February 2011 Design of simultaneous bidirectional CMOS transceiver with a resistor-transconductor hybrid for optical chip-to-chip interconnects
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Abstract
A simultaneous bidirectional CMOS transceiver for full duplex chip-to-chip optical interconnects is proposed, utilizing a resistor-transconductor (R-gm) hybrid. The hybrid separates the inbound signal from the input/output compound signal. The simultaneous bidirectional CMOS transceiver is designed in a 0.18 μm Si-CMOS technology, with power dissipation of 79 mW and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 4.6 GHz for both the transmitter and the receiver with a 3-dB gain of 26.6 dB and 10.6 dB, respectively, in full-duplex mode.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ikechi Augustine Ukaegbu, Jamshid Sangirov, Trong-Hieu Ngo, Tae-Woo Lee, and Hyo-Hoon Park "Design of simultaneous bidirectional CMOS transceiver with a resistor-transconductor hybrid for optical chip-to-chip interconnects", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 79332N (21 February 2011); https://doi.org/10.1117/12.876170
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