21 February 2011 Ultrafast few-fermion dynamics in single self-assembled InGaAs/GaAs quantum dots
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Abstract
We review a comprehensive study of the ultrafast optoelectronic properties of a single self-assembled InGaAs/GaAs quantum dot. While manipulation of the artificial atom relies on two widely and independently tunable picoseconds pulse trains, sensitive readout is achieved via the ~pA photocurrent of the diode device. In particular, the absorption changes after occupation of an s-shell exciton reveal a biexciton absorption line as well as previously unobserved p-shell transitions in the presence of s-shell population. In addition, time-resolved data directly maps the picosecond tunneling times of electrons and holes out of the dot. Beyond these incoherent phenomena, we also realize coherent QD manipulations. Those comprise well-known excitonic Rabi-oscillations as well as single-pulse biexciton generation and conditional Rabi-oscillations of the exciton-biexciton transition after deterministic exciton preparation.
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M. Betz, M. Zecherle, C. Ruppert, E. C. Clark, G. Abstreiter, J. J. Finley, "Ultrafast few-fermion dynamics in single self-assembled InGaAs/GaAs quantum dots", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793702 (21 February 2011); doi: 10.1117/12.873249; https://doi.org/10.1117/12.873249
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