Paper
21 February 2011 Enhancing slow- and fast-light effects in quantum dot semiconductor waveguides through ultrafast dynamics
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Abstract
In this paper we review our theoretical work on slow and fast light effects in quantum dot semiconductor optical amplifiers (QD SOAs), in particular we investigate the carrier dynamical contributions to the dynamic gain grating and cross gain modulation induced by unique ultrafast inter-subband carrier dynamics between discrete QD bound states. Our calculations predict that by increasing the injection current density, additional ultra-fast coherent gain contributions around 100GHz arise in contrast to the slow sub-gigahertz carrier density pulsation (CDP) effects. For potential applications in microwave photonics, especially targeting the millimeter wave range, we propose that quantum dot devices might be used to realize an optically fed microwave phase shifter in the frequency range of 100GHz.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaohui Chen and Jesper Mørk "Enhancing slow- and fast-light effects in quantum dot semiconductor waveguides through ultrafast dynamics", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 793709 (21 February 2011); https://doi.org/10.1117/12.872866
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KEYWORDS
Modulation

Phase shifts

Semiconductors

Ultrafast phenomena

Microwave radiation

Waveguides

Quantum dots

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